INVESTIGATION OF STRAINED LEAD SELENIDE NANOLAYERS

Authors

  • A. M. Pashaev, O. I. Davarashvili, M. I. Enukashvili2, Z. G. Akhvlediani, L. P. Bychkova2, M. A. Dzagania, and V. P. Zlomanov Author

Keywords:

defect annihilation model, low growth rates, refractive index, deformation, additional absorption limit, layer color, classification of layers.

Abstract

For a number of practical applications, it is necessary to fabricate strained nanolayers of IV-VI semiconductors with a high anisotropic deformation. There are presented the technological conditions for achieving the high deformations with thicker layers. Low layer growth rates were realized in accordance with the model of nonstoichiometric defect annihilation in dislocation nuclei causing their inhibition. When studying the optical properties, new approaches to the analysis of the refractive index variation with deformation and the determination of the absorption by free carriers. Additional absorption is sensitive to the concentration of free carriers in layers, and it is relatively low at the concentration of 5·1018 cm-3. In this case the forbidden gap width is determined more precisely with straightening of squared absorption coefficients.

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Published

2016-06-30

Issue

Vol. 3 No. 6 (2016): June 2016

Section

Articles