STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET

Authors

  • Akansha Ephraim*, Neelesh Agrawal, Anil Kumar, A.K. Jaiswal Author

Keywords:

Trenched, MOSFET, UMOSFET, RSO

Abstract

In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics were examined using Silvaco Atlas.

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Published

2017-08-30

Issue

Vol. 4 No. 8 (2017): August 2017

Section

Articles